Optimization of Deposition Uniformity for Large-aperture Nif Substrates in a Planetary Rotation System

نویسنده

  • Ô Ô
چکیده

LLE Review, Volume 94 67 Introduction Large substrates for precision optical applications require the accurate, uniform deposition of multilayer thin-film coatings. Typically, this results in the use of electron-beam evaporation in a “box-coater” configuration, utilizing either simple or planetary rotation of the substrates. Simple rotation of the substrate minimizes the size of the necessary coating chamber but generally results in films with nonuniformity of 2% or greater,1 an unacceptable level for the precise requirements of the National Ignition Facility (NIF). Typical planetary rotation systems, containing four to five individual substrate holders, or planets, tend to produce relatively uniform coatings but would necessarily be quite large in order to process optics of a significant size. To process large optics for the NIF, a counterrotating planetary geometry was developed and implemented in a 72-in. electron-beam deposition system.2 Although this rotation system utilizes planetary motion to reduce the effect of deposition fluctuations, the large optic sizes relative to the overall chamber size and geometry result in coatings with a significant degree of nonuniformity if regions of the vapor plume are not masked.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting...

متن کامل

Control of Film Uniformity Properties in a Planetary Radial-flow Gallium Nitride Cvd System

The development and application of a geometrically-based uniformity criterion is presented for film uniformity optimization in a radial-flow GaN epitaxy reactor system. In this multi-wafer reactor system, individual wafers rotate on a rotating susceptor in a planetary motion to reduce the effects of reactant depletion on deposition uniformity; the uniformity criterion developed for this system ...

متن کامل

Uniformity Control in Planetary Chemical Vapor Deposition Reactor Systems

A simplified model of the spatially dependent deposition profile in chemical vapor deposition reactors with planetary wafer rotation is developed. The model focuses on reactors operated in “depletion” mode, a situation where the precursor species have undergone a sequence of gas-phase decomposition reactions leaving only the deposition species to diffuse to and react on the substrate surface, g...

متن کامل

Process Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays

Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...

متن کامل

Realization of low-loss mirrors with sub-nanometer flatness for future gravitational wave detectors

The second generation of gravitational wave detectors will aim at improving by an order of magnitude their sensitivity versus the present ones (LIGO and VIRGO). These detectors are based on long-baseline Michelson interferometer with high finesse Fabry-Perot cavity in the arms and have strong requirements on the mirrors quality. These large low-loss mirrors (340 mm in diameter, 200 mm thick) mu...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2003